Maximum power dissipation (Pc) of IGBT transistor, W: Maximum collector-emitter voltage |Uce|, V: 1200V Collector-emitter saturation voltage |Ucesat|, V: 2.5V Maximum gate-emitter voltage |Ueg|, V: Maximum collector current |Ic|, A: 50A Maximum junction temperature (Tj), °C: Rise time, nS: 0 Maximum collector capacity (Cc), pF: Package:  N CHANNEL IGBT + ANTI PARALLEL DIODE E3