Maximum power dissipation (Pc) of IGBT transistor, W: Maximum collector-emitter voltage |Uce|, V: 600V Collector-emitter saturation voltage |Ucesat|, V: 1.8V Maximum gate-emitter voltage |Ueg|, V: Maximum collector current |Ic|, A: 70A Maximum junction temperature (Tj), °C: Rise time, nS: 82 Maximum collector capacity (Cc), pF: Package: TO247