Maximum power dissipation (Pc) of IGBT transistor, W:

Maximum collector-emitter voltage |Uce|, V: 600V

Collector-emitter saturation voltage |Ucesat|, V: 2.8V

Maximum gate-emitter voltage |Ueg|, V:

Maximum collector current |Ic|, A: 32A

Maximum junction temperature (Tj), °C:

Rise time, nS: 55

Maximum collector capacity (Cc), pF:

Package: TO220

20 KV

50 mA

CM200DY-24H

Maximum power dissipation (Pc) of IGBT transistor, W:

Maximum collector-emitter voltage |Uce|, V: 1200V

Collector-emitter saturation voltage |Ucesat|, V: 3.4V

Maximum gate-emitter voltage |Ueg|, V:

Maximum collector current |Ic|, A: 30A

Maximum junction temperature (Tj), °C:

Rise time, nS: 150

Maximum collector capacity (Cc), pF:

Package: TO247