IGBT - IXDP20N60B HIGH VOLTAGE IGBT 600V 32A vce 2/2V

Brand: GERMANY

Group: Semiconductor

Subgroup: IGBT

Model / Brand: IXYS

Stock: Please Call.

قیمت: 250,000 Tomman

Download PDF file

Keywords: IXDP20N60B

 

 

Detail:

Maximum power dissipation (Pc) of IGBT transistor, W:

Maximum collector-emitter voltage |Uce|, V: 600V

Collector-emitter saturation voltage |Ucesat|, V: 2.8V

Maximum gate-emitter voltage |Ueg|, V:

Maximum collector current |Ic|, A: 32A

Maximum junction temperature (Tj), °C:

Rise time, nS: 55

Maximum collector capacity (Cc), pF:

Package: TO220