
IGBT - IXSH45N120B HIGH VOLTAGE IGBT 1200V 75A vce 3.0 V
Brand: GERMANY
Group: Semiconductor
Subgroup: IGBT
Model / Brand: IXYS
Stock: Please Call.
قیمت: 550,000 Tomman
Keywords: IXSH45N120B
Detail:
Maximum power dissipation (Pc) of IGBT transistor, W:
Maximum collector-emitter voltage |Uce|, V: 1200V
Collector-emitter saturation voltage |Ucesat|, V: 3V
Maximum gate-emitter voltage |Ueg|, V:
Maximum collector current |Ic|, A: 75A
Maximum junction temperature (Tj), °C:
Rise time, nS: 380
Maximum collector capacity (Cc), pF:
Package: TO247