
IGBT - IXDN75N120 HIGH VOLTAGE IGBT WITH OPTIONAL DIODE
Brand: GERMANY
Group: Semiconductor
Subgroup: IGBT
Model / Brand: IXYS
Stock: Please Call.
قیمت: 4,000,000 Tomman
Keywords: IXDN75N120 IXYS IXYS IXYS IXYS IXDN IXDN75 HXDN75N IXDN75N120 IXDN75N120A ای جی بی تی ای جی بی تی ای جی بی تی مینی بلوک IGBT IGBT IGBT IGBT IXDN75N120A IXDN75N120A IXDN75N120A
Detail:
Maximum power dissipation (Pc) of IGBT transistor, W:
Maximum collector-emitter voltage |Uce|, V: 1200V
Collector-emitter saturation voltage |Ucesat|, V:
Maximum gate-emitter voltage |Ueg|, V:
Maximum collector current |Ic|, A: 120A
Maximum junction temperature (Tj), °C: 150
Rise time, nS: 0
Maximum collector capacity (Cc), pF:
Package: ISOTOP