IGBT - IXGH20N60BD1 HIPERFAST IGBT + DIODE 600V 40A 100NS

Brand: GERMANY

Group: Semiconductor

Subgroup: IGBT

Model / Brand: IXYS

Stock: Please Call.

قیمت: 4,500,000 Tomman

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Keywords: IXGH20N60BD1

 

 

Detail:

Maximum power dissipation (Pc) of IGBT transistor, W:

Maximum collector-emitter voltage |Uce|, V: 600V

Collector-emitter saturation voltage |Ucesat|, V:

Maximum gate-emitter voltage |Ueg|, V:

Maximum collector current |Ic|, A: 40A

Maximum junction temperature (Tj), °C: 175

Rise time, nS: 100

Maximum collector capacity (Cc), pF:

Package: TO247