IXDR30N120D1 HIGH VOLTAGE IGBT WITH OPRATIONAL DIODE

IGBT - IXDR30N120D1 HIGH VOLTAGE IGBT WITH OPRATIONAL DIODE

Brand: GERMANY

Group: Semiconductor

Subgroup: IGBT

Model / Brand: IXYS

Stock: Please Call.

قیمت: 650,000 Tomman

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Keywords: IXDR30N120D1

 

 

Detail:

Maximum power dissipation (Pc) of IGBT transistor, W: Maximum collector-emitter voltage |Uce|, V: 1200V Collector-emitter saturation voltage |Ucesat|, V: 2.9V Maximum gate-emitter voltage |Ueg|, V: Maximum collector current |Ic|, A: 50A Maximum junction temperature (Tj), °C: Rise time, nS: 70 Maximum collector capacity (Cc), pF: Package: ISOPLUS247

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