IGBT - IXDR30N120D1 HIGH VOLTAGE IGBT WITH OPRATIONAL DIODE
Brand: GERMANY
Group: Semiconductor
Subgroup: IGBT
Model / Brand: IXYS
Stock: Please Call.
قیمت: 650,000 Tomman
Keywords: IXDR30N120D1
Detail:
Maximum power dissipation (Pc) of IGBT transistor, W: Maximum collector-emitter voltage |Uce|, V: 1200V Collector-emitter saturation voltage |Ucesat|, V: 2.9V Maximum gate-emitter voltage |Ueg|, V: Maximum collector current |Ic|, A: 50A Maximum junction temperature (Tj), °C: Rise time, nS: 70 Maximum collector capacity (Cc), pF: Package: ISOPLUS247